Part Name
2SK1120
PDF
page
6 Pages
File Size
411.8 kB
MFG CO.
Toshiba
2SK1120 Datasheet - Toshiba
Toshiba
DC−DC Converter and Motor Drive Applications
● Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.)
● High forward transfer admittance : |Yfs| = 4.0 S (typ.)
● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Part Name
Description
View
MFG CO.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) ( Rev : 2006 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSII.5) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) ( Rev : 2006 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSII.5) ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSII.5) ( Rev : 1998 )
Toshiba
Share Link: 