2SJ645 Datasheet - SANYO -> Panasonic
MFG CO.

SANYO -> Panasonic
P-channel MOS silicon field effect transistor For ultra-high speed switching
FEATUREs
• Low on-resistance.
• 2.5V drive.
Part Name
Description
View
MFG CO.
P Channel Mos Type Field Effect Transistor For Ultra High Speed Switching
SANYO -> Panasonic
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
N-channel MOS-type silicon field-effect transistor For ultra-high-speed switching
SANYO -> Panasonic
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics