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2SJ621 Datasheet - NEC => Renesas Technology

2SJ621 image

Part Name
2SJ621

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page
8 Pages

File Size
68.2 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• 1.8 V drive available
• Low on-state resistance
    RDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)
    RDS(on)2 = 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A)
    RDS(on)3 = 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)
    RDS(on)4 = 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)


Part Name
Description
View
MFG CO.
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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