DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Super low on-state resistance:
    RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A)
    RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A)
• Low input capacitance
    Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)
• Built-in gate protection diode