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2SJ600 Datasheet - NEC => Renesas Technology

2SJ600 image

Part Name
2SJ600

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4 Pages

File Size
38.2 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.


FEATURES
• Low on-state resistance:
    RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A)
    RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A)
• Low Ciss: Ciss = 1900 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package

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Part Name
Description
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MFG CO.
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PDF
NEC => Renesas Technology

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