2SJ600 Datasheet - NEC => Renesas Technology
MFG CO.

NEC => Renesas Technology
DESCRIPTION
The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A)
RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A)
• Low Ciss: Ciss = 1900 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
Part Name
Description
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MFG CO.
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology