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2SJ207 Datasheet - Renesas Electronics

2SJ207 image

Part Name
2SJ207

Other PDF
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page
7 Pages

File Size
539.3 kB

MFG CO.
Renesas
Renesas Electronics 

DESCRIPTION
   The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply.
   As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.


FEATURES
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its
   high input impedance.
• Possible to reduce the number of parts by omitting the bias
   resistor.
• Has low on-state resistance
   RDS(on) = 4.0 Ω MAX. VGS = - 2.5 V, ID = - 30 mA
   RDS(on) = 1.5 Ω MAX. VGS = - 4.0 V, ID = - 500 mA


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