2SD864 Datasheet - Inchange Semiconductor
MFG CO.

Inchange Semiconductor
DESCRIPTION
·High DC Current Gain : hFE = 1000(Min)@ IC= 1.5A
·Collector-Emitter Breakdown Voltage : V(BR)CEO = 120V(Min)
·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1.5A
·Complement to Type 2SB765
APPLICATIONS
·Medium speed and power switching applications.
Part Name
Description
View
MFG CO.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.