2SD2462 Datasheet - Toshiba
MFG CO.

Toshiba
Power Amplifier Applications
• High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A)
• Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA)
• Complementary to 2SB1602
Part Name
Description
View
MFG CO.
Silicon NPN Triple Diffused Type Transistor
KEXIN Industrial
Silicon NPN Triple Diffused Type Transistor
Toshiba
Silicon NPN Triple Diffused Type Transistor
KEXIN Industrial
Silicon NPN Triple Diffused Type Transistor
TY Semiconductor
Silicon NPN Triple Diffused Type Transistor
Toshiba
Silicon NPN Triple Diffused Type Transistor
KEXIN Industrial
SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTOR
Toshiba
Transistor Silicon NPN Triple Diffused Type
Toshiba
Silicon NPN Triple Diffused Type Transistor
Toshiba
Silicon NPN Triple Diffused Type Transistor
TY Semiconductor