2SD2440 Datasheet - Toshiba
MFG CO.

Toshiba
Switching Application
High breakdown voltage: VCBO = 100 V
: VEBO = 18 V
Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A)
High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
High DC current gain: hFE = 200 (min) (VCE = 5 V, IC = 0.5 A)
Part Name
Description
View
MFG CO.
Silicon NPN Triple Diffused Type Transistor
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Silicon NPN Triple Diffused Type Transistor
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SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTOR
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Transistor Silicon NPN Triple Diffused Type
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Silicon NPN Triple Diffused Type Transistor
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Silicon NPN Triple Diffused Type Transistor
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