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2SD2162M Datasheet - Renesas Electronics

2SD2162 image

Part Name
2SD2162M

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8 Pages

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189.4 kB

MFG CO.
Renesas
Renesas Electronics 

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.


FEATURES
• High hFE due to Darlington connection
   hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A)
• Full mold package that does not require an insulating board or insulation bushing

 

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