2SD2131 Datasheet - Toshiba
MFG CO.
Toshiba
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
• High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
• Zener diode included between collector and base.
• Unclamped inductive load energy: E = 150 mJ (min)
Part Name
Description
View
MFG CO.
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) ( Rev : 2009 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON)
Unspecified
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1999 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
