Features
1) Low VCE(sat).
   VCE(sat) = 0.25V (Typ.)
   (IC / IB = 4A / 0.1A)
2) Excellent DC current gain charac teristics.
3) Complements the
   2SB1386 / 2SB1412 / 2SB1326 / 2SB1436.

Structure
  Epitaxial planar type
  NPN silicon transistor