2SD1784 Datasheet - Toshiba
MFG CO.

Toshiba
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Part Name
Description
View
MFG CO.
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 2010 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 1999 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1999 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1999 )
Toshiba