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2SD1582M Datasheet - NEC => Renesas Technology

2SD1582 image

Part Name
2SD1582M

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4 Pages

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102.4 kB

MFG CO.
NEC
NEC => Renesas Technology 

NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS

The 2SD1582 is a single type super high hFEtransistor and low collector saturation voltage and high voltage. This transistor is available for broad applications as variety of drives.


FEATURES
• Ultra high hFE
   hFE= 800 to 3200 (@ VCE= 5.0 V, IC= 300 mA)
• High voltage and wide ASO
   VCBO= 60 V, VCEO= 50 V
• Low collector saturation voltage
   VCE(sat) = 0.15 V TYP. (@ IC= 500 A, IB= 5.0 mA)


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