2SD1580 Datasheet - ROHM Semiconductor
MFG CO.

ROHM Semiconductor
Features
1) Low collector saturation voltage : VCE(sat)= 0.3V(Typ.)(IC/IB= 4A/0.4A)
2) Excellent current response of DC current gain (hFE).
3) High collector power dissipation: Pc=40W (Tc=25°C)
4) Wide ASO.
5) Easy packaging because of its mold type design
Part Name
Description
View
MFG CO.
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
Low Feq. Power Amp. Triple Diffused Planar NPN Silicon Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Transisor
Unspecified
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor
ROHM Semiconductor
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.