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2SD1413 PDF
2SD1413 Datasheet - Shenzhen SPTECH Microelectronics Co., Ltd.
MFG CO.

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min)
• Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A
• High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V
• Complement to Type 2SB1023
APPLICATIONS
• Switching applications
• Hammer driver,pulse motor driver applications
• Power amplifier applications.
Part Name
Description
View
MFG CO.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.