2SD1411A Datasheet - Toshiba
MFG CO.
Toshiba
High-Current Switching Applications
Power Amplifier Applications
• Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A
• Complementary to 2SB1018A
Part Name
Description
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MFG CO.
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2005 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
