2SD1410 Datasheet - Inchange Semiconductor
MFG CO.

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)
• Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A
• High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V
APPLICATIONS
• Igniter applications
• High voltage switching applications
Part Name
Description
View
MFG CO.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.