Part Name
2SD1223
PDF
page
5 Pages
File Size
154.1 kB
MFG CO.
Toshiba
2SD1223 Datasheet - Toshiba
Toshiba
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
• Complementary to 2SB908.
Part Name
Description
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
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