2SD1031 Datasheet - Inchange Semiconductor
MFG CO.

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
• Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for power amplifier applications.
Part Name
Description
View
MFG CO.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.