2SCR562F3(2020) Datasheet - ROHM Semiconductor
MFG CO.

ROHM Semiconductor
Features
1) Suitable for Middle Power Driver.
2) Low VCE(sat)
VCE(sat)=220mV(Max.).
(IC/IB=3A/150mA)
3) High collector current.
IC=6A(max),ICP=7A(max)
4) Leadless small SMD package (HUML2020L3)
Excellent thermal and electrical conductivity.
APPLICATION
LOW FREQUENCY AMPLIFIER
Part Name
Description
View
MFG CO.
PNP -6.0A -30V Middle Power Transistor
ROHM Semiconductor
NPN 5.0A 30V Middle Power Transistor
ROHM Semiconductor
NPN 5.0A 30V Middle Power Transistor ( Rev : 2013 )
ROHM Semiconductor
NPN 1.5A 30V Middle Power Transistor
ROHM Semiconductor
NPN 5.0A 30V Middle Power Transistor
ROHM Semiconductor
NPN 3.0A 30V Middle Power Transistor
ROHM Semiconductor
NPN 5.0A 30V Middle Power Transistor
ROHM Semiconductor
NPN 3.0A 30V Middle Power Transistor ( Rev : 2014 )
ROHM Semiconductor
NPN 2.0A 30V Middle Power Transistor
ROHM Semiconductor
NPN 2.0A 30V Middle Power Transistor
ROHM Semiconductor