2SC5886 Datasheet - Toshiba
MFG CO.
Toshiba
High-Speed Swtching Applications
DC-DC Converter Applications
• High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
• Low collector-emitter saturation: VCE (sat) = 0.22 V (max)
• High-speed switching: tf = 55 ns (typ.)
Part Name
Description
View
MFG CO.
Silicon NPN Epitaxial Type Transistor
Toshiba
Silicon NPN Epitaxial Type Transistor
TY Semiconductor
TRANSISTOR SILICON NPN EPITAXIAL TYPE
New Jersey Semiconductor
TRANSISTOR SILICON NPN EPITAXIAL TYPE ( Rev : 1997 )
Toshiba
Silicon NPN Epitaxial Type Transistor
Toshiba
Silicon NPN Epitaxial Type Transistor
Toshiba
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Hi-Sincerity Microelectronics
Silicon NPN transistor epitaxial type
Unspecified
Silicon NPN Epitaxial Type Transistor
Toshiba
Silicon NPN Epitaxial Type Transistor
Toshiba
