2SC5307 Datasheet - Toshiba
MFG CO.
Toshiba
High Voltage Switching Applications
• High breakdown voltage : VCEO = 400 V
• Low collector-emitter saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA)
Part Name
Description
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MFG CO.
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2005 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
