2SC5242(2013) Datasheet - Toshiba
MFG CO.
Toshiba
Power Amplifier Applications
• High Collector breakdown voltage: VCEO = 230 V (min)
• Complementary to 2SA1962
• Suitable fro use in 80-W high fidelity audio amplifier’s output stage
Part Name
Description
View
MFG CO.
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2005 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
