2SC5201 Datasheet - Toshiba
MFG CO.

Toshiba
High-Voltage Switching Applications
• High breakdown voltage: VCEO = 600 V
• Low saturation voltage: VCE (sat) = 1.0 V (max)
(IC = 20 mA, IB = 0.5 mA)
Part Name
Description
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MFG CO.
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Unspecified
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE ( Rev : 1999 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type
Toshiba