2SC4332 Datasheet - Renesas Electronics
MFG CO.

Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4332 and 2SC4332-Z are mold power transistors developed for high-speed switching and feature a very low collector-to-emitter saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
FEATURES
• Low collector saturation voltage
VCE(sat) = 0.3 V MAX. (IC = 3.0 A / IB = 0.15 A)
• Fast switching speed:
tf ≤ 0.3 μs MAX. (IC = 3.0 A)
• High DC current gain
Part Name
Description
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MFG CO.
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology