2SC3673(2001) Datasheet - Toshiba
MFG CO.
Toshiba
SWITCHING APPLICATIONS
SOLENOID DRIVE APPLICATIONS
• High DC Current Gain: hFE = 500 (Min.)
• Low Saturation Voltage: VCE (sat) = 0.5 V (Max.)
Part Name
Description
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MFG CO.
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2009 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2002 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2010 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
