Part Name
2SC3624
Other PDF
no available.
PDF
page
6 Pages
File Size
323.6 kB
MFG CO.
Renesas Electronics
2SC3624 Datasheet - Renesas Electronics
Renesas Electronics
FEATURES
● High DC Gurrent Gain : hFE = 1000 to 3200
● Low VCE(sat) : VCE(sat) = 0.07 V TYP.
● High VEBO : VEBO = 15 V (2SC3624A)
Part Name
Description
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MFG CO.
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
Renesas Electronics
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD
Renesas Electronics
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
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