2SC2922 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage
V(BR)CEO=180V(Min)
• Good Linearity of hFE
• Complement to Type 2SA1216
APPLICATIONS
• Designed for audio and general purpose applications.
Part Name
Description
View
MFG CO.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor