2SC2881(1997) Datasheet - Toshiba
MFG CO.

Toshiba
POWER AMPLIFIER APPLICATIONS.
• High Voltage: VCEO = 120 V
• High Transition Frequency: fT = 120 MHz (Typ.)
• PC = 1~2 W (Mounted Ceramic Substrate)
• Small Flat Package
• Complementary to 2SA1201
Part Name
Description
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MFG CO.
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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