2SC2565O Datasheet - Toshiba
MFG CO.

Toshiba
POWER AMPLIFIER APPLICATIONS.
FEATURES:
• High Breakdown Voltage : VCEO = 160V
• High Transition Frequency : fT = 80MHz (Typ.)
• Complementary to 2SA1095.
• Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage.
Part Name
Description
View
MFG CO.
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Toshiba
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Toshiba
SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
Toshiba
SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
Toshiba
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Unspecified
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Toshiba
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Toshiba
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Toshiba
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
Toshiba