2SC1959(1996) Datasheet - Toshiba
MFG CO.

Toshiba
AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS
DRIVER STAGE AMPLIFIER APPLICATIONS
SWITCHING APPLICATIONS
* Excellent hFE Linearity : hFE (2)= 25 (Min.): VCE= 6 V, IC= 400 mA
* 1 watt Amplifier Applications.
* Complementary to 2SA562TM.

Part Name
Description
View
MFG CO.
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
Silicon PNP Epitaxial Type (PCT Process) Transistor
Toshiba
Silicon PNP Epitaxial Type (PCT Process) Transistor
Toshiba
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR ( Rev : 1996 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2007 )
Toshiba