Part Name
2SB755
Description
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2 Pages
File Size
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MFG CO.
New Jersey Semiconductor
2SB755 Datasheet - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(BR)CEo=-150V(Min)
• Good Linearity of hFE
• Complement to Type 2SD845
APPLICATIONS
• Designed for power amplifier app
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