Part Name
2SB719
Description
Other PDF
no available.
PDF
page
2 Pages
File Size
65.8 kB
MFG CO.
New Jersey Semiconductor
2SB719 Datasheet - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEo=-160V(Min)
• Wide Area of Safe Operation
• Complement to Type 2SD759
APPLICATIONS
• Designed for power amplifier and TV vertical deflection
output applications.
Part Name
Description
View
MFG CO.
Share Link: 