2SB703 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)
• DC Current Gain- : hFE= 40~200 @IC= -0.5A
• Complement to Type 2SD743
APPLICATIONS
• Designed for use in audio frequency power amplifier, low speed switching applications.
Part Name
Description
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MFG CO.
Silicon PNP Power Transistor
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Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
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