Part Name
2SB563
Description
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MFG CO.
New Jersey Semiconductor
2SB563 Datasheet - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)
• Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3A
• Complement to Type 2SD297
APPLICATIONS
• Designed for low frequency power amplifier applications.
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MFG CO.
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