2SB1531 Datasheet - New Jersey Semiconductor
MFG CO.
New Jersey Semiconductor
DESCRIPTION
• High DC Current Gain-
: hFE= 5000(Min)@lc= -5A
• Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@lc= -5A
• Complement to Type 2SD2340
APPLICATIONS
• Designed for power amplifier applications
Part Name
Description
View
MFG CO.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
