Part Name
2SB1186
Description
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MFG CO.
New Jersey Semiconductor
2SB1186 Datasheet - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.)
• Good Linearity of hFE
• Complement to Type 2SD1763
APPLICATIONS
• Power amplifier applications.
• Driver stage amplifier applications.
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MFG CO.
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