2SB1182TL_09 Datasheet - ROHM Semiconductor
MFG CO.

ROHM Semiconductor
● Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SD1766 / 2SD1758 / 2SD1862.
● Structure
Epitaxial planar type
PNP silicon transistor
Part Name
Description
View
MFG CO.
Medium power transistor(-32V,-2A)
Galaxy Semi-Conductor
Medium power transistor (32V, 2A)
ROHM Semiconductor
Medium Power Transistor (32V, 2A) ( Rev : RevA )
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (−32V, −2A)
ROHM Semiconductor
Medium power transistor (32V, 2A) ( Rev : 2009 )
ROHM Semiconductor
Medium power Transistor(32V, 2A)
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (32V, 2A)
ROHM Semiconductor