Part Name
2SB1160
Description
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2 Pages
File Size
82.2 kB
MFG CO.
New Jersey Semiconductor
2SB1160 Datasheet - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEo=-150V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD1715
APPLICATIONS
• Designed for high power amplifier applications
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