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2SB1155 PDF
2SB1155 Datasheet - Shenzhen SPTECH Microelectronics Co., Ltd.
MFG CO.

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)
• Good Linearity of hFE
• Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -7A
• Complement to Type 2SD1706
APPLICATIONS
• Designed for power switching applications
Part Name
Description
View
MFG CO.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor