2SB1114 Datasheet - Renesas Electronics
MFG CO.
Renesas Electronics
DESCRIPTION
2SB1114 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits.
FEATURES
● High DC Current Gain hFE = 135 to 600
● Low VCE(sat). VCE(sat) = - 0.3 V at 1.5 A
● Complement to 2SD1614
Part Name
Description
View
MFG CO.
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
