2SB1016A Datasheet - Toshiba
MFG CO.
Toshiba
Power Amplifier Applications
• High breakdown voltage: VCEO = −100 V
• Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max)
• Complementary to 2SD1407A
Part Name
Description
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MFG CO.
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2009 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
