Part Name
2SA1812_REVA
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MFG CO.
ROHM Semiconductor
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2SA1812_REVA Datasheet - ROHM Semiconductor
ROHM Semiconductor
Features
1) High breakdown voltage, BVCEO= -400V.
2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA.
3) High switching speed, typically tf : 1μs at IC = -100mA.
4) Wide SOA (safe operating area).
Part Name
Description
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MFG CO.
High-voltage Switching Transistor (Telephone power supply)(-400V, -0.5A)
ROHM Semiconductor
High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)
ROHM Semiconductor
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