2SA1298(2007) Datasheet - Toshiba
MFG CO.
Toshiba
Low Frequency Power Amplifier Application
Power Switching Applications
• High DC current gain: hFE = 100~320
• Low saturation voltage: VCE (sat) = −0.4 V (max) (IC = −500 mA, IB = −20 mA)
• Suitable for driver stage of small motor
• Complementary to 2SC3265
• Small package
Part Name
Description
View
MFG CO.
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TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
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TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) ( Rev : 2003 )
Toshiba
