2SA1296(1996) Datasheet - Toshiba
MFG CO.

Toshiba
POWER AMPLIFIER APPLICATIONS
POWER SWITCHING APPLICATIONS
• Low Saturation Voltage: VCE (sat)= −0.5 V (Max.) @IC= −2 A
• Complementary to 2SC3266.
Part Name
Description
View
MFG CO.
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
Silicon Transistor PNP Epitaxial Type (PCT process)
Toshiba
Silicon PNP Epitaxial Type (PCT Process) Transistor
Toshiba
Silicon PNP Epitaxial Type (PCT Process) Transistor
Toshiba
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR ( Rev : 1996 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba