2SA1162-G Datasheet - Toshiba
MFG CO.

Toshiba
Audio Frequency General Purpose Amplifier Applications
• High voltage and high current: VCEO= −50 V, IC= −150 mA (max)
• Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA)
= 0.95 (typ.)
• High hFE: hFE= 70~400
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SC2712
• Small package
Part Name
Description
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MFG CO.
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
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Toshiba