Part Name
2N7053
Description
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2 Pages
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79 kB
MFG CO.
New Jersey Semiconductor
2N7053 Datasheet - New Jersey Semiconductor
New Jersey Semiconductor
NPN Darlington Transistor
This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.
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MFG CO.
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