datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Unisonic Technologies  >>> 2N7002ZL-AE2-R PDF

2N7002ZL-AE2-R Datasheet - Unisonic Technologies

2N7002Z image

Part Name
2N7002ZL-AE2-R

Other PDF
  no available.

PDF
DOWNLOAD     

page
4 Pages

File Size
167.4 kB

MFG CO.
UTC
Unisonic Technologies 

DESCRIPTION
The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


FEATURES
* RDS(ON) <7.5Ω
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

Page Link's: 1  2  3  4 

Part Name
Description
View
MFG CO.
300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2018 )
PDF
Unisonic Technologies
300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Unisonic Technologies
300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2012 )
PDF
Unisonic Technologies
300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2014 )
PDF
Unisonic Technologies
300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF
Unisonic Technologies
300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF
Unisonic Technologies
300mA, 60V N-CHANNEL POWER MOSFET
PDF
Unisonic Technologies
300mA, 60V N-CHANNEL POWER MOSFET ( Rev : 2012 )
PDF
Unisonic Technologies
300mA, 60V N-CHANNEL POWER MOSFET ( Rev : 2014 )
PDF
Unisonic Technologies
300mA, 60V DUAL N-CHANNEL POWER MOSFET ( Rev : 2012 )
PDF
Unisonic Technologies

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]