Part Name
2N7002K2
Description
Other PDF
no available.
PDF
page
6 Pages
File Size
654 kB
MFG CO.

Silikron Semiconductor Co.,LTD.
Description:
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications.
FEATUREs and Benefits:
■ Advanced trench MOSFET process technology
■ Special designed for PWM, load switching and
general purpose applications
■ Ultra low on-resistance with low gate charge
■ High Power and current handing capability
■ Fully Avalanche Rated
■ ESD Protection HBM ≥ 2KV